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The Microsemi Corporation 1N5347BE3/TR8 is a silicon Zener diode with a nominal voltage of 10 V and a maximum power dissipation of 5 W. It features a ±5% tolerance, indicated by the 'B' suffix, and operates within a temperature range of -65°C to +150°C. The device utilizes a T-18 axial leaded plastic package and includes an 'e3' suffix denoting RoHS compliance. It is supplied in tape and reel packaging.
Verify that the ordering suffix 'TR8' corresponds to the specified tape and reel packaging format as defined by the manufacturer's documentation. Confirm the presence of the 'e3' suffix to ensure the component meets RoHS compliance standards. Cross-reference the part number with official Microsemi datasheets to validate the specific electrical tolerances and thermal characteristics before procurement.
Select this component when a 10 V Zener reference with 5 W power capability is required. The B suffix ensures a tight ±5% voltage tolerance suitable for precision applications. Ensure the design accommodates the T-18 axial package dimensions and provides adequate heat sinking to maintain performance within the specified thermal resistance limits.
This component belongs to the JEDEC registered 1N5333B through 1N5388B series of silicon 5 Watt Zener diodes. The series offers a wide selection of voltages from 3.3 V to 200 V. The 1N5347BE3/TR8 specifically represents the 10 V variant within this standardized lineup, manufactured by Microsemi Corporation.
Surface mount equivalents are available as SMBJ5347BE3 or SMBG5347BE3. For military screening requirements, variants prefixed with MQ, MX, or MV may be considered if environmental ruggedness is necessary.