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The Microsemi Corporation 1N5360B is a silicon Zener diode with a nominal voltage of 25V and a maximum power dissipation of 5W. It features a ±5% tolerance, indicated by the B suffix, and operates within a temperature range of -65°C to +150°C. The device utilizes an axial-lead T-18 package with void-free transfer molded epoxy. Electrical characteristics include a test current of 50mA, a maximum dynamic impedance of 4.0 ohms, and a maximum reverse current of 0.5µA.
Verify that the component matches the specific JEDEC registered series requirements. Confirm the presence of the B suffix to ensure the correct ±5% voltage tolerance. Check for RoHS compliance if required, which necessitates the e3 suffix. Ensure the ordering prefix aligns with any necessary military screening levels such as JAN or JANTXV.
Select this component when a 5-watt power rating and 25-volt regulation are required. Consider the T-18 package dimensions for board layout constraints. Evaluate the thermal resistance specifications to determine adequate heat sinking needs. Verify that the operating environment falls within the specified -65°C to +150°C temperature limits.
This part belongs to the 1N5333B through 1N5388B series of silicon 5-watt Zener diodes manufactured by Microsemi's Scottsdale Division. The series covers a wide voltage selection from 3.3V to 200V. These devices are designed for applications demanding high reliability and robust voltage regulation capabilities.
Surface mount equivalents are available as SMBJ5333 to SMBJ5388B or SMBG5333B to SMBG5388B. For higher reliability requirements, consider parts with MQ, MX, or MV prefixes for MIL-PRF-19500 screening.