1N5367BE3/TR12

Overview

The Microchip Technology 1N5367BE3/TR12 is a silicon 5-watt Zener diode with a nominal voltage of 43 V and a ±5% tolerance. It operates within a temperature range of -65°C to +150°C, featuring a maximum reverse leakage current of 500 nA and a dynamic impedance of 20 Ω at the test current of 30 mA. The component utilizes an axial-lead T-18 package and is supplied in tape-and-reel format.

Feature Summary

• Provides stable voltage regulation across a broad operating current and temperature range
• Withstands high surge stresses and exhibits minimal voltage change versus current
• Features flexible axial-lead mounting terminals for standard through-hole integration

Applications

• Voltage regulation circuits requiring 5-watt power dissipation
• High-current applications supported by adequate heat sinking
• General-purpose electronic equipment utilizing axial-lead components

Procurement Notes

Verify the specific suffix configuration against official datasheets to confirm tolerance and packaging details. Confirm RoHS compliance status and lead material specifications prior to procurement. Ensure thermal management requirements align with the specified junction-to-lead thermal resistance for reliable operation.

Selection Notes

Select this component for applications requiring a 43 V reference with moderate precision. Consider the 5-watt power rating and thermal derating curves when designing heat sinks. Verify that the axial-lead form factor fits the intended PCB layout constraints.

Part Context

This device belongs to the JEDEC registered 1N5333B through 1N5388B series of 5-watt Zener diodes manufactured by Microsemi (now Microchip Technology). The series covers a wide voltage range from 3.3 V to 200 V, offering various tolerance options identified by suffix letters such as B for ±5%.

Replacement Considerations

Cross-reference with other manufacturers' 5-watt Zener diodes rated at 43 V with ±5% tolerance. Verify mechanical dimensions of the T-18 package and electrical parameters like dynamic impedance and leakage current to ensure functional compatibility.