SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Microchip Technology 1N5371BE3/TR12 is a silicon 5-watt Zener diode from the JEDEC registered 1N5333-5388B series. It provides voltage regulation at a nominal Zener voltage of 60 V with a standard tolerance of ±5%. The device operates within a temperature range of -65°C to +150°C and features a maximum reverse leakage current of 500 nA at 43 V. Electrical characteristics include a test current of 20 mA, a maximum dynamic impedance of 40 Ohms, and a maximum surge current capability of 350 A.
Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm RoHS compliance status via the e3 suffix designation. Ensure ordering suffixes match required packaging formats such as tape and reel options. Validate thermal resistance parameters against specific mounting conditions on FR4 PCBs or lead lengths.
Select this component for applications requiring robust 5-watt power dissipation capabilities. Consider the ±5% voltage tolerance for general-purpose regulation tasks. Evaluate thermal management requirements based on the specified junction-to-lead thermal resistance. Verify that the 60 V breakdown voltage aligns with circuit design constraints and operating margins.
This part belongs to the 1N5333B through 1N5388B series of silicon Zener diodes manufactured by Microsemi's Scottsdale Division. The series offers a wide selection of voltages ranging from 3.3 V to 200 V. These plastic encapsulated devices are designed for high DC currents with adequate heat sinking and feature void-free transfer molded epoxy bodies meeting UL94V-0 standards.
Surface mount equivalents are available in the SMBJ5333 to SMBJ5388B series. Alternative packages include SMBG5333B to SMBG5388B. Military screening levels can be obtained using MQ, MX, or MV prefixes for JAN, JANTX, and JANTXV variants respectively.