1N5386BE3/TR12

Overview

The Microsemi Corporation 1N5386BE3/TR12 is a silicon Zener diode with a nominal voltage of 180 V and a tolerance of ±5%. It features a maximum power dissipation of 5.0 W at 25°C, a test current of 5.0 mA, and a maximum dynamic impedance of 430 Ohms. The device operates within a temperature range of -65°C to +150°C and utilizes a T-18 axial leaded package.

Feature Summary

• Provides stable voltage regulation across broad operating currents and temperatures
• Withstands high surge stresses and exhibits minimal voltage change versus current
• Features flexible axial-lead mounting terminals for through-hole applications

Applications

• Voltage regulation in electronic circuits
• High surge stress protection
• Power supply reference design

Procurement Notes

Verify the specific suffix configuration against official datasheets to confirm RoHS compliance and tape-and-reel packaging specifications. Confirm that the component meets moisture classification Level 1 requirements without dry pack constraints. Ensure thermal management aligns with the specified junction-to-lead resistance values during integration.

Selection Notes

Select this component for applications requiring precise 180 V regulation with ±5% tolerance. Consider the 5.0 W power rating and low thermal resistance when designing heat sinking solutions. Verify compatibility with standard FR4 printed circuit board layouts for optimal thermal performance.

Part Context

This part belongs to the JEDEC registered 1N5333B through 1N5388B series of 5.0 watt Zener diodes. The series offers a wide selection of voltages from 3.3 V to 200 V with various tolerance options identified by suffix letters. The e3 suffix indicates RoHS compliant devices available in this product line.

Replacement Considerations

Consult official documentation for verified substitute part numbers within the same series or equivalent military screening levels.