1N5387E3/TR8

Overview

The Microsemi Corporation 1N5387E3/TR8 is a silicon Zener diode with a nominal voltage of 190 V and a power dissipation rating of 5.0 watts at 25°C. It features a T-18 axial leaded plastic package and offers a standard ±5% tolerance, indicated by the B suffix. The device operates within a temperature range of -65°C to +150°C and includes RoHS compliance via the e3 suffix. Electrical characteristics include a maximum dynamic impedance of 450 ohms and a reverse leakage current of 0.5 µA at 137 V.

Feature Summary

• Provides stable voltage regulation across a broad operating current and temperature range
• Withstands high surge stresses and exhibits minimal voltage change versus current variations
• Features flexible axial-lead mounting terminals for secure installation
• Moisture classification is Level 1 per IPC/JEDEC J-STD-020B requiring no dry pack

Applications

• Voltage regulation in power supply circuits
• Overvoltage protection for sensitive electronic components
• Reference voltage sources in measurement equipment

Procurement Notes

Verify that the ordering suffix matches the required specifications: 'e3' indicates RoHS compliance, while 'TR' denotes tape and reel packaging. Confirm the base part number corresponds to the 190V variant within the 1N5333-5388B series. Ensure the manufacturer designation aligns with Microsemi Corporation or its authorized successors to guarantee authenticity and adherence to JEDEC registration standards.

Selection Notes

Select this component when a 5-watt axial Zener diode with a 190V breakdown voltage is required. The ±5% tolerance suits applications needing moderate precision. Consider the thermal resistance of 25°C/W junction-to-lead for heat sinking requirements. Verify compatibility with existing PCB layouts due to the T-18 package dimensions and lead spacing constraints.

Part Context

This device belongs to the 1N5333B through 1N5388B series of JEDEC registered silicon Zener diodes manufactured by Microsemi's Scottsdale Division. The series covers a voltage range from 3.3V to 200V with various tolerance options identified by suffix letters. These plastic encapsulated diodes are designed for high DC currents with adequate heat sinking and offer military equivalent screening levels upon request.

Replacement Considerations

Direct substitutes within the same series include other 1N53xxB variants with different voltage ratings. For surface mount equivalents, consider SMBJ5387B or SMBG5387B. Verify that any replacement maintains the 5W power rating and T-18 or compatible package form factor.

FAQ

What does the 'e3' suffix indicate on the 1N5387E3/TR8?

The 'e3' suffix signifies that the device is RoHS compliant and features annealed matte-Tin plating on the terminals.

How is polarity indicated on the 1N5387E3/TR8?

Polarity is indicated by a band on the cathode end; the diode must be operated with the banded end positive with respect to the opposite end.