1N5391G-T

Overview

The 1N5391G-T is a silicon rectifier diode manufactured by Taiwan Semiconductor Corporation. It features a maximum average forward rectified current of 1.5 A and a repetitive peak reverse voltage of 50 V. The device utilizes a glass-passivated junction for high reliability and low leakage current. It is housed in a DO-15 (DO-204AC) axial leaded package, suitable for general-purpose rectification applications requiring standard recovery characteristics.

Feature Summary

• Glass-passivated junction construction ensures high reliability and environmental stability
• Low forward voltage drop for improved efficiency
• Low reverse leakage current minimizes power loss
• High forward surge current capability handles transient loads

Applications

• General-purpose rectification in power supplies
• Bridging circuits in AC to DC conversion
• Free-wheeling diodes in inductive load protection

Procurement Notes

Verify the specific suffix 'T' against official datasheets to confirm tape-and-reel packaging requirements. Ensure compatibility with existing PCB footprints for the DO-15 package. Confirm RoHS compliance status if required by project specifications. Cross-reference manufacturer part numbers to avoid substitution errors.

Selection Notes

Select this component for applications requiring robust standard recovery performance at 50 V reverse voltage. The DO-15 package supports high thermal dissipation compared to smaller surface-mount alternatives. Consider the 1.5 A current rating when designing for continuous load conditions. Verify operating temperature range requirements against the specified junction limits.

Part Context

This component belongs to the 1N539x series of general-purpose silicon rectifiers. The series offers various voltage ratings from 50 V to 1000 V while maintaining a consistent 1.5 A current capacity. These diodes are widely used in industrial and consumer electronics for reliable AC-to-DC conversion tasks.