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The Diodes Incorporated 1N5392S-T is a discontinued silicon rectifier diode featuring a DO-41 axial leaded package. It provides a maximum average forward rectified current of 1.5 A and a peak repetitive reverse voltage of 100 V. The component exhibits a low forward voltage drop of 1.1 V at rated current and supports a non-repetitive peak forward surge current of 50 A. Electrical characteristics include a typical total capacitance of 20 pF and a junction-to-lead thermal resistance of 25 °C/W, operating within a temperature range of -65 to +150 °C.
Verify the discontinuation status indicated in the datasheet before finalizing design specifications. Confirm that alternative sourcing channels can supply the specific DO-41 tape and reel packaging format required for automated assembly processes. Ensure compatibility with existing bill of materials regarding package dimensions and terminal finish specifications.
Select this component for designs requiring a 100 V blocking voltage and 1.5 A continuous current capacity in an axial package. Consider the DO-41 form factor for through-hole mounting constraints. Evaluate the thermal resistance parameters against expected ambient temperatures to ensure reliable operation under load conditions without exceeding junction limits.
This part belongs to the 1N539x/S series of 1.5 A silicon rectifiers manufactured by Diodes Incorporated. The 'S' suffix specifically denotes the smaller DO-41 plastic case variant compared to the standard DO-15 package. The series covers voltage ratings from 50 V to 1000 V, providing standardized options for various DC blocking requirements in general electronic equipment.
Public confirmed substitute part numbers are not available in the provided documentation.