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The Diotec Semiconductor 1N5393 is a standard recovery rectifier diode designed for general-purpose applications. It features a single configuration housed in a DO-15 through-hole package. The device supports a maximum average forward rectified current of 1.5 A and a repetitive peak reverse voltage of 200 V. Key electrical characteristics include a maximum forward voltage of 1.3 V, a typical reverse leakage current of 5 uA, and a maximum non-repetitive peak forward surge current of 50 A. The junction recovery time is specified at 1.5 us, with an operating temperature range spanning from -50 C to +175 C.
Verify the specific manufacturer datasheet for the exact RoHS compliance status and REACH SVHC declarations prior to integration. Confirm that the DO-15 package dimensions and lead solderability requirements align with your assembly process specifications. Ensure the selected variant matches the required voltage and current ratings for your specific circuit design constraints.
Select this component when a robust silicon rectifier with a 200 V blocking capability and 1.5 A continuous current rating is required. The DO-15 package is suitable for through-hole mounting where higher thermal mass is beneficial. Consider the 1.5 us recovery time for standard frequency applications rather than high-speed switching environments.
This part belongs to the 1N4/1N5 series of glass passivated junction rectifiers manufactured by Diotec Semiconductor. These components are engineered for durability and consistent performance across a wide temperature range. The series utilizes void-free molded plastic techniques to enhance mechanical strength and environmental resistance.
Cross-reference with Vishay 1N5393GP/56-E3 or LRC 1N5399 equivalents for similar DO-15 packaged rectifiers. Verify pinout compatibility and ensure thermal derating curves match your application's ambient temperature requirements before substitution.