1N5397G-T

Overview

The 1N5397G-T is a silicon rectifier manufactured by Taiwan Semiconductor Corporation. It features a standard recovery design with a maximum average forward rectified current of 1.5 A and a repetitive peak reverse voltage of 600 V. The device utilizes a DO-204AC (DO-15) axial through-hole package. Key electrical characteristics include a maximum non-repetitive peak forward surge current of 50 A, a typical reverse leakage current of 5 µA, and a maximum operating junction temperature of 175 °C.

Feature Summary

• Glass-passivated junction construction for high reliability
• Low forward voltage drop for improved efficiency
• High surge current capability
• Halogen-free compliant material

Applications

• General purpose rectification
• Free wheeling diode circuits
• Power supply input stages

Procurement Notes

Verify the specific suffix 'T' against official datasheets to confirm tape and reel packaging requirements. Confirm RoHS compliance status and halogen-free designation directly with the manufacturer or authorized distributors prior to procurement.

Selection Notes

Select this component for applications requiring 600 V blocking voltage and 1.5 A continuous current in an axial package. Ensure thermal management supports the specified maximum junction temperature range during operation.

Part Context

This part belongs to the 1N539x series of general-purpose silicon rectifiers. The series offers various voltage ratings from 50 V to 1000 V while maintaining consistent current handling capabilities across the family.

Replacement Considerations

Cross-reference with other manufacturers offering 1N5397 equivalents such as Vishay or Rectron. Verify pinout compatibility and ensure replacement parts meet identical voltage and current ratings.