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The 1N5397GH is a standard recovery rectifier manufactured by Taiwan Semiconductor Corporation. It features a single diode configuration housed in an axial DO-204AC (DO-15) package designed for through-hole mounting. The device provides a maximum average forward rectified current of 1.5 A and supports a repetitive peak reverse voltage of 600 V. Key electrical characteristics include a maximum non-repetitive peak forward surge current of 50 A, a typical reverse leakage current of 5 uA at rated voltage, and a maximum reverse recovery time of 1.5 us. The component operates within a junction temperature range of -55°C to +150°C.
Verify the specific suffix GH against official Taiwan Semiconductor documentation to confirm exact packaging and material specifications. Ensure compatibility with existing board layouts regarding the DO-15 footprint. Confirm environmental compliance status such as RoHS or halogen-free requirements prior to procurement. Cross-reference datasheet revisions to ensure parameter consistency with design specifications.
Select this component when a robust standard recovery rectifier is required for 600V applications. The DO-15 package offers sufficient thermal mass for moderate current loads. Consider the 1.5 us reverse recovery time for frequency limitations in switching applications. Verify that the 50 A surge rating meets transient protection needs in the target circuit design.
This part belongs to the 1N539x series of silicon rectifiers, which are widely used in general-purpose electronics. The series covers various voltage ratings from 50V to 1000V while maintaining a consistent 1.5A current capacity. The 1N5397 variant specifically targets 600V isolation requirements, balancing performance and cost for industrial and consumer applications.
Direct substitutes include Vishay 1N5397GP-E3/54 and Diotec 1N5397. Verify pinout compatibility and thermal derating curves before substitution. Ensure replacement parts meet the same reverse voltage and current ratings.