SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The onsemi 1N5399 is a general-purpose silicon rectifier diode designed for high reliability applications. It features a peak repetitive reverse voltage of 1000 V and an average rectified forward current of 1.5 A at 75°C with no thermal runaway. The device exhibits a maximum forward voltage of 1.4 V at rated current and low reverse leakage current of 5.0 µA at 25°C. It operates within a junction temperature range of -55°C to +150°C and withstands a non-repetitive peak forward surge current of 50 A.
Verify the manufacturer origin, as Fairchild Semiconductor was acquired by onsemi. Confirm that the specific part number matches the required electrical ratings, particularly the 1000V reverse voltage and 1.5A current capacity. Ensure compliance with RoHS standards if applicable to your assembly process. Check for authorized distributor status to avoid counterfeit components.
Select this component when a standard recovery rectifier with high voltage blocking capability is required. It is suitable for applications demanding reliable performance under moderate thermal conditions. Consider the DO-15 package size for through-hole mounting constraints. Evaluate the forward voltage drop against system efficiency requirements.
This device belongs to the 1N5391 through 1N5399 series of general-purpose rectifiers. The series offers varying reverse voltage ratings from 50V to 1000V while maintaining consistent current handling capabilities. These diodes are widely used in industrial and consumer electronics for basic AC-to-DC conversion tasks.
Equivalent parts include Vishay 1N5399GP and LRC 1N5399. Verify pinout compatibility and package dimensions before substitution. Ensure replacement devices meet or exceed the original 1000V reverse voltage and 1.5A forward current specifications.