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The 1N5399G-T is a glass passivated silicon rectifier diode manufactured by Diodes Incorporated. It features a DO-15 molded plastic case with axial leads and a cathode band marking. The device supports a peak repetitive reverse voltage of 1000V and an average rectified output current of 1.5A at 55°C ambient temperature. Electrical characteristics include a maximum forward voltage of 1.1V at 1.5A, a non-repetitive peak forward surge current rating of 50A, and a typical total capacitance of 15pF. The component operates within a junction and storage temperature range of -65°C to +175°C.
Verify the specific ordering suffix to confirm packaging configuration, as the 'T' suffix indicates tape and reel shipping. Confirm compliance requirements against the latest EU Directive Annex Notes regarding glass and solder exemptions. Ensure design-in status is reviewed, as the datasheet explicitly marks this series as not recommended for new designs.
Select this component when a 1000V blocking voltage and 1.5A continuous current are required in a standard DO-15 package. Consider the thermal resistance of 80°C/W and derating curves for high-temperature environments. Evaluate the 50A surge capability against potential inrush currents in the target circuit application.
This part belongs to the 1N5391G through 1N5399G family of 1.5A glass passivated rectifiers. The family shares identical mechanical dimensions and electrical characteristics except for the rated DC blocking voltage, which ranges from 50V to 1000V across the series variants.
Public confirmed substitute part numbers are not provided in the source documentation.
The maximum operating junction temperature is +175°C.
Polarity is indicated by a cathode band on the molded plastic case.