SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The 1N5399G is a general-purpose silicon rectifier manufactured by Taiwan Semiconductor. It features a standard recovery configuration housed in a DO-15 (DO-204AC) axial leaded package. The device supports a maximum average forward rectified current of 1.5 A and a repetitive peak reverse voltage of 1 kV. Key electrical characteristics include a maximum non-repetitive peak forward surge current of 50 A, a typical reverse leakage current of 5 uA, and a maximum forward voltage drop of 1 V at rated current. The component operates within a junction temperature range of -65°C to +150°C.
Verify the specific manufacturer datasheet for the exact electrical tolerances and thermal resistance values before finalizing the design. Confirm that the DO-15 package dimensions match the target PCB footprint requirements. Ensure compliance with RoHS directives if required by the end product specifications. Check for any specific ordering suffixes that may indicate halogen-free or tape-and-reel packaging options.
Select this component when a robust 1.5 A rectifier with 1 kV blocking capability is required in an axial package. The standard recovery profile makes it suitable for lower frequency applications where fast switching is not critical. Consider the 150°C operating temperature limit for high-thermal environments. Compare against other manufacturers' equivalents if supply chain diversification is necessary.
This part belongs to the 1N539xG series of general-purpose rectifiers from Taiwan Semiconductor. The 'G' suffix typically denotes a green compound, indicating halogen-free compliance according to IEC 61249-2-21 definitions. The series covers various reverse voltage ratings from 50 V to 1000 V, sharing the same 1.5 A current rating and DO-15 package form factor.
Direct replacements include Vishay 1N5399GP and MCC 1N5399-TP. Verify pinout compatibility and ensure the substitute meets the 1.5 A current and 1 kV voltage requirements.