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The MCC 1N5399GP-AP is a single-phase, one-element silicon rectifier diode designed for general-purpose applications. It features an average forward current rating of 1.5 A and a maximum repetitive reverse voltage (VRRM) of 1000 V. The device utilizes a DO-15 (DO-204AC) plastic package with two pins and an isolated case connection. Key electrical characteristics include a non-repetitive peak forward surge current of 50 A and a junction temperature range from -65 °C to 175 °C. The component is RoHS compliant and lead-free.
Verify the specific suffix 'AP' against the manufacturer's official ordering guide to confirm compliance status and packaging details. Ensure the selected variant matches the required environmental standards and pin configuration for your assembly process. Cross-reference the datasheet revision date to guarantee alignment with current manufacturing specifications.
Select this component for designs requiring a robust 1000 V blocking voltage in a standard axial leaded package. The 1.5 A continuous current rating suits moderate power applications. Consider the 175 °C maximum junction temperature for high-thermal environments. Verify that the DO-15 footprint accommodates the physical dimensions specified in the mechanical drawings.
This part belongs to the 1N5391GP through 1N5399GP series of glass passivated junction rectifiers. The series offers varying reverse voltage ratings from 50 V to 1000 V while maintaining consistent current handling capabilities. These devices are characterized by their Superectifier technology, which enhances reliability compared to standard molded junctions.
Direct replacements include Vishay 1N5399GP variants and other manufacturers' 1N5399 equivalents. Ensure substitute parts match the 1.5 A current, 1000 V voltage, and DO-15 package constraints.