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Product Detailed Parameters
- Description：DIODE STANDARD 50V 3A DO201AD
- Series：-
- Mfr：Taiwan Semiconductor Corporation
- Package：Tape & Reel (TR)
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：50 V
- Current - Average Rectified (Io)：3A
- Voltage - Forward (Vf) (Max) @ If：1.1 V @ 3 A
- Speed：Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：5 µA @ 50 V
- Capacitance @ Vr, F：25pF @ 4V, 1MHz
- Mounting Type：Through Hole
- Package / Case：DO-201AD, Axial
- Supplier Device Package：DO-201AD
- Operating Temperature - Junction：-55°C ~ 150°C
- Grade：-
- Qualification：-
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Overview
The Taiwan Semiconductor 1N5400G R0G is a standard silicon rectifier diode housed in a DO-201AD package. It supports a maximum average forward current of 3 A and offers a repetitive peak reverse voltage rating of 50 V. The device features a glass passivated chip junction and operates within a junction temperature range of -55°C to +150°C. Electrical characteristics include a typical forward voltage of 1.1 V at 3 A, a maximum non-repetitive surge current of 125 A, and a reverse leakage current of 5 µA at rated voltage. Thermal resistance values are specified as 45 °C/W (junction-to-ambient) and 15 °C/W (junction-to-case).
Feature Summary
- Glass passivated chip junction for enhanced reliability.
- High current capability with low forward voltage drop.
- Halogen-free construction compliant with IEC 61249-2-21 standards.
Applications
- DC to DC converter circuits.
- Switching mode power supplies and inverters.
- General purpose rectification tasks.
Procurement Notes
Verify the specific suffix 'R0G' against official ordering information, as datasheets typically list 'A0G' or tape/reel options. Confirm RoHS compliance status and ensure the component meets JESD 201 class 2 whisker test requirements for your assembly process. Cross-reference thermal derating curves for high-temperature environments.
Selection Notes
Select this component for applications requiring robust 3 A continuous current handling and reliable 50 V blocking capability. Consider the DO-201AD through-hole form factor for mechanical stability. Evaluate thermal management needs based on the 45 °C/W junction-to-ambient resistance when designing heat dissipation strategies.
Part Context
This part belongs to the 1N5400G–1N5408G series from Taiwan Semiconductor, covering voltage ratings from 50 V to 1000 V. The series utilizes a standardized DO-201AD plastic case with pure tin-plated axial leads. The 'G' suffix indicates green compound packaging, while other suffixes may denote specific packaging formats like ammo boxes or tape and reel.
Replacement Considerations
Compatible substitutes include the 1N5400 from other manufacturers such as onsemi or Diodes Incorporated, provided they meet the 3 A / 50 V specifications and DO-201AD footprint. Verify that alternative parts also offer comparable surge current ratings and thermal performance.
FAQ
Is the 1N5400G available in an automotive qualified version?
Yes, the datasheet indicates that AEC-Q101 qualified versions are available, identified by the 'H' suffix in the ordering code (e.g., 1N54xGH).
What is the maximum operating junction temperature?
The maximum junction temperature (TJ MAX) is specified as 150°C.
