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The 1N5400G is a standard recovery rectifier diode manufactured by Taiwan Semiconductor Corporation. It features a single-phase configuration housed in the DO-201AD axial leaded package. The device supports a maximum average forward current of 3 A and a repetitive peak reverse voltage of 50 V. Key electrical characteristics include a maximum non-repetitive peak forward surge current of 200 A, a maximum reverse leakage current of 10 uA, and a maximum forward voltage drop of 1 V. The component operates within a temperature range of -65 °C to +150 °C junction temperature.
Verify the manufacturer marking matches Taiwan Semiconductor Corporation specifications. Confirm the DO-201AD package dimensions and lead finish comply with J-STD-002B solderability requirements. Ensure the part number suffix aligns with RoHS compliance standards. Cross-reference datasheet parameters against circuit requirements before integration.
Select this component when a 3 A continuous current rating and 50 V blocking voltage are required. The DO-201AD package provides robust mechanical stability for through-hole mounting. Consider the 150 °C maximum junction temperature for high-thermal environments. Verify compatibility with standard PCB footprints designed for axial leaded diodes.
This component belongs to the 1N5400 series of silicon rectifiers. It shares the same electrical ratings as other manufacturers' 1N5400 variants but utilizes Taiwan Semiconductor's specific manufacturing processes. The G suffix typically indicates Green/RoHS compliant packaging. It serves as a direct replacement for legacy 1N5400 parts in existing designs.
Direct replacements include Vishay 1N5400/71-E3 and onsemi 1N5400G. Verify pinout polarity and thermal resistance values match original design constraints. Ensure substitute packages meet mechanical clearance requirements.