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The 1N5400GH is a standard recovery rectifier diode manufactured by Taiwan Semiconductor Corporation. It features a maximum average forward rectified current of 3 A and a maximum repetitive peak reverse voltage of 50 V. The device utilizes a silicon planar construction within a DO-201AD axial leaded package. Key electrical characteristics include a maximum non-repetitive peak forward surge current of 200 A, a maximum DC reverse leakage current of 5 µA at rated voltage, and a maximum forward voltage drop of 1.2 V at full load. It operates reliably across a junction temperature range from -65 °C to +150 °C.
Verify the specific suffix 'GH' against official Taiwan Semiconductor documentation to confirm exact mechanical or marking variations compared to the standard 1N5400G. Ensure the component matches the required DO-201AD package dimensions and terminal plating specifications before integration into designs.
Select this component when a 3 A continuous current rating and 50 V blocking voltage are required in an axial through-hole package. Consider the standard recovery speed and thermal limits for high-frequency switching environments. Compare with Vishay equivalents if supply chain diversification is necessary.
This part belongs to the 1N540x series of plastic rectifiers, which provides a range of voltage ratings from 50 V to 1000 V while maintaining a consistent 3 A current capacity. The series is widely used in industrial and consumer electronics for basic AC-to-DC conversion tasks requiring robust performance in compact packages.
The 1N5400/71-E3 from Vishay is a confirmed substitute offering identical 3 A and 50 V ratings in the same DO-201AD package.