SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The 1N5401 is a silicon rectifier diode manufactured by Diotec Semiconductor, housed in the DO-204AC (DO-15) axial leaded package. It features a maximum repetitive peak reverse voltage of 100 V and supports a maximum average forward rectified current of 3 A at 75°C ambient temperature. The device exhibits a typical forward voltage drop of 1.1 V at 3 A and a maximum reverse leakage current of 5 µA at 100 V. It withstands a peak forward surge current of 200 A for an 8.3 ms single half-sine wave. The junction operating temperature range spans from -50°C to 175°C.
Verify the specific ordering suffix against the manufacturer's official datasheet to confirm exact electrical tolerances and packaging configuration. Ensure the component meets RoHS3 compliance requirements if mandated by the design specification. Cross-reference the manufacturer part number with distributor listings to validate authenticity and traceability before procurement.
Select this component for applications requiring robust 3 A continuous current handling with a 100 V blocking capability. The standard recovery characteristics make it suitable for line-frequency operations. Consider the thermal derating requirements for average forward current when ambient temperatures exceed 75°C to ensure long-term operational stability.
This component belongs to the standard recovery rectifier family within Diotec Semiconductor's discrete semiconductor portfolio. It utilizes a molded plastic case with axial leads for through-hole mounting. The device is designed for general-purpose use where high current capability and high reliability are primary design constraints.
Equivalent parts include the 1N5400 series variants sharing identical electrical ratings but differing only in reverse voltage specifications. Verify pinout compatibility and thermal performance characteristics when substituting with components from other manufacturers.