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The Comchip Technology 1N5401-G is a general-purpose rectifier diode featuring a silicon single configuration in an isolated DO-201AD (DO-27) package. It supports a maximum average forward current of 3 A and a non-repetitive peak forward surge current of 200 A. The device offers a maximum reverse voltage of 100 V with a typical forward voltage drop of 1 V and a reverse leakage current of 5 uA. Operating temperatures range from -65 °C to 125 °C, ensuring high reliability for standard power supply applications.
Verify the specific manufacturer datasheet for the 1N5401-G to confirm exact electrical tolerances and thermal characteristics. Ensure the procurement specification matches the required DO-201AD package and RoHS compliance status. Cross-reference the supplier's documentation against the official Comchip Technology specifications to validate performance parameters before integration into designs.
Select this component when a 100 V reverse voltage rating and 3 A continuous current capacity are required. The DO-201AD through-hole package facilitates easy prototyping and manual assembly. Consider the 125 °C maximum operating temperature limit for thermal management planning in enclosed or high-ambient environments.
This part belongs to the 1N54xx series of glass-passivated silicon rectifiers. These components are widely used in low-to-medium power conversion tasks. The 1N5401 variant specifically targets applications requiring lower reverse blocking voltages compared to higher-numbered siblings in the same family.
Compatible substitutes include the 1N5400 and 1N5402 from various manufacturers, provided they meet the 3 A current and 100 V reverse voltage requirements. Verify pinout compatibility and package dimensions when swapping between different brand offerings.