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The 1N5401G-K is a standard recovery rectifier manufactured by Taiwan Semiconductor Corporation. It features a maximum average forward rectified current of 3A and a repetitive peak reverse voltage of 100V. The device utilizes a DO-201AD axial through-hole package with an isolated case connection. Electrical characteristics include a maximum DC blocking voltage of 100V, a maximum RMS voltage of 70V, and a non-repetitive peak forward surge current capability of 125A at 8.3ms single half-sine-wave impulse. The junction temperature range spans from -55°C to +150°C.
Verify the specific suffix 'K' against the official Taiwan Semiconductor datasheet to confirm if it denotes a distinct packaging variant or marking change compared to the standard 1N5401G. Ensure compliance with RoHS and REACH regulations as specified in the manufacturer's environmental documentation before procurement.
Select this component when a 3A current rating and 100V reverse voltage are required in a DO-201AD package. Consider the standard recovery speed and thermal characteristics for applications operating within the specified temperature range. Verify that the axial lead configuration fits the target PCB layout constraints.
This part belongs to the 1N540x series of silicon rectifiers produced by Taiwan Semiconductor. The series covers voltage ratings from 50V to 1000V while maintaining a consistent 3A current capacity. These devices are designed for general-purpose use, offering a balance of performance and cost-effectiveness for industrial and consumer electronics.
Compatible substitutes include the 1N5401 from other manufacturers such as Diotec or Comchip Technology, provided they meet the same 3A/100V specifications and DO-201AD footprint requirements.