SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Taiwan Semiconductor 1N5401G R0G is a standard silicon rectifier diode designed for general-purpose applications. It features a DO-201AD axial leaded package and supports a maximum average forward current of 3 A. The device provides a repetitive peak reverse voltage rating of 100 V, with a corresponding RMS voltage of 70 V. Electrical characteristics include a maximum forward voltage of 1.1 V at rated current and a surge peak forward current capability of 125 A. The component operates within a junction temperature range of -55°C to +150°C.
Verify that the specific ordering code matches the required voltage rating and packaging format. Confirm compliance requirements such as RoHS and halogen-free status against project specifications. Ensure the supplier provides valid traceability documentation. Check for any specific handling instructions related to the tape and reel or ammo box configuration provided by the manufacturer.
Select this component when a 100 V reverse blocking capability is required alongside a 3 A continuous current rating. Consider the thermal resistance values for heat dissipation planning in enclosed environments. Evaluate the forward voltage characteristics against efficiency targets. Ensure the DO-201AD package fits the available PCB footprint and mounting constraints.
This part belongs to the 1N5400G series, which covers voltage ratings from 50 V to 1000 V. All members share identical current and thermal specifications but differ in reverse voltage capabilities. The series utilizes a standardized DO-201AD package and glass passivation technology common across the family for consistent performance metrics.
Cross-reference other manufacturers' 1N5401 equivalents to verify pinout compatibility and electrical parameter alignment. Ensure substitute parts meet the same DO-201AD mechanical dimensions and soldering requirements.