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The Taiwan Semiconductor 1N5402G A0G is a standard silicon rectifier diode housed in the DO-201AD package. It features a maximum average forward rectified current of 3A and a repetitive peak reverse voltage of 200V. The device supports a maximum non-repetitive peak forward surge current of 125A and operates within a junction temperature range of -55°C to +150°C. Electrical characteristics include a typical forward voltage of 1.0V at 3A and a maximum reverse leakage current of 5µA at rated voltage.
Verify the specific ordering code matches the required packaging configuration, as the 'A0G' suffix indicates an ammo box packing format containing 500 units. Confirm that the component meets RoHS compliance and halogen-free requirements according to IEC 61249-2-21 standards before finalizing procurement specifications.
Select this component when a 200V blocking voltage is required alongside a 3A continuous current rating. Ensure the application environment accommodates the specified thermal resistance values and that the DO-201AD through-hole package fits the board layout constraints. Verify if AEC-Q101 qualification is necessary, as it requires the 'H' suffix variant.
This part belongs to the 1N5400G series of standard rectifiers manufactured by Taiwan Semiconductor. The series covers voltage ratings from 50V to 1000V across multiple part numbers. The 1N5402G specifically provides a 200V rating, distinguishing it from lower or higher voltage variants within the same electrical family.
Compatible substitutes include other 1N5402 equivalents from different manufacturers offering identical 3A/200V ratings in the DO-201AD package. Ensure replacement parts match the forward voltage and surge current specifications to maintain circuit performance integrity.