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The Taiwan Semiconductor 1N5402G R0G is a standard silicon rectifier diode rated for a maximum average forward current of 3 A and a repetitive peak reverse voltage of 200 V. It utilizes a glass passivated chip junction within a DO-201AD axial package. The device supports a maximum non-repetitive surge current of 125 A and operates across a junction temperature range of -55°C to +150°C. Electrical characteristics include a typical forward voltage of 1.0 V at 3 A and a maximum reverse leakage current of 5 µA at 25°C.
Verify the specific ordering code against the manufacturer's official documentation to confirm packaging type, as suffixes determine reel or ammo box quantities. Ensure the component meets RoHS compliance requirements for your assembly process. Cross-reference the exact part number with the latest datasheet version K2105 to validate electrical parameters before procurement.
Select this component when a 200 V blocking voltage is required for 3 A continuous applications. Consider the thermal resistance values for heat dissipation planning in enclosed environments. Verify that the DO-201AD package dimensions fit the target PCB layout. Confirm if AEC-Q101 qualification is necessary for automotive-grade reliability.
This device belongs to the 1N5400G series, which covers voltage ratings from 50 V to 1000 V. All members share identical mechanical structures and current handling capabilities, differing primarily in their reverse voltage breakdown thresholds. The series is designed for general-purpose rectification tasks requiring robust performance.
Compatible substitutes include Vishay 1N5402 and onsemi 1N5402G. Verify that replacement parts maintain the same 200 V rating, 3 A current capacity, and DO-201AD package form factor to ensure direct interchangeability without circuit modification.