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The Taiwan Semiconductor 1N5402GHR0G is a standard rectifier diode featuring a glass-passivated silicon junction. It provides a maximum average forward rectified current of 3 A and a repetitive peak reverse voltage of 200 V. The device operates within a junction temperature range of -55°C to +150°C and supports a non-repetitive peak forward surge current of 125 A. Packaged in the DO-201AD axial lead format, it meets RoHS standards and complies with halogen-free requirements.
Verify that the specific suffix 'H' confirms AEC-Q101 qualification status as defined by the manufacturer's ordering guide. Ensure the package type matches the required DO-201AD form factor. Confirm compliance with RoHS and halogen-free directives if environmental regulations apply to the final assembly. Cross-reference the exact part number against the official datasheet version K2105 to ensure accurate electrical specifications.
Select this component when a 200 V reverse voltage rating is required alongside a 3 A continuous forward current capacity. The high thermal stability up to 150°C makes it suitable for demanding environments. Consider the AEC-Q101 qualification if the application targets automotive systems. Evaluate the 125 A surge capability against potential transient load conditions in the circuit design.
This device belongs to the 1N5400G series of standard rectifiers manufactured by Taiwan Semiconductor. The series covers voltage ratings from 50 V to 1000 V, sharing common mechanical and thermal characteristics. The 'H' suffix specifically denotes AEC-Q101 qualification, distinguishing it from standard industrial variants within the same physical package family.
Compatible substitutes include Vishay 1N5402-E3/66 and onsemi 1N5402G. Verify that replacement parts maintain the 200 V reverse voltage and 3 A forward current ratings. Ensure the alternative components utilize the DO-201AD package for direct mechanical interchangeability.