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The Fairchild Semiconductor 1N5403 is a general-purpose silicon rectifier diode designed for through-hole mounting in the DO-201AD plastic package. It features a single-diode configuration with two pins and an isolated case connection. The device supports a maximum continuous forward current of 3A and withstands a peak repetitive reverse voltage of 300V. Key electrical characteristics include a maximum forward voltage drop of 1.2V, a peak non-repetitive forward surge current of 200A, and a maximum reverse leakage current of 5μA. It operates within a temperature range of -50°C to 150°C.
Verify the manufacturer designation as Fairchild Semiconductor has been acquired by ON Semiconductor. Ensure the ordering part number aligns with current ON Semiconductor catalogs, as legacy Fairchild identifiers may require suffix updates or cross-referencing. Confirm the specific package variant matches the required DO-201AD form factor and lead specifications before finalizing procurement orders.
Select this component when a robust 3A rectifier with 300V blocking capability is required for through-hole assembly. The DO-201AD package provides adequate thermal dissipation for moderate power levels. Consider the 1.2V forward voltage drop for efficiency calculations and ensure the 200A surge rating exceeds the expected inrush currents in the target application environment.
The 1N5403 belongs to the widely recognized 1N5400 series of general-purpose plastic rectifiers. This series is standardized across multiple manufacturers for common industrial and consumer electronics applications. The device serves as a fundamental building block for low-to-medium frequency rectification tasks where cost-effectiveness and proven reliability are prioritized over high-speed switching performance.
Equivalent parts from other manufacturers include Vishay 1N5403-E3/54 and Bilin 1N5403G. Verify that substitute components maintain identical DO-201AD mechanical dimensions and meet the same 3A/300V electrical ratings to ensure direct compatibility without circuit modification.