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The onsemi 1N5404 is a general-purpose silicon rectifier diode housed in the DO-201AD axial leaded package. It supports an average rectified forward current of 3.0 A at 75°C and withstands a maximum repetitive reverse voltage of 400 V. The device features a non-repetitive peak forward surge current rating of 200 A for a single half-sine wave. Electrical characteristics include a maximum forward voltage of 1.2 V at 3.0 A, a reverse current of 5.0 μA at rated voltage and 25°C, and a total capacitance of 30 pF. Operating junction temperature ranges from -55°C to +150°C.
Verify the manufacturer origin, as this part number is distributed by multiple vendors including Vishay and Diotec. Confirm the specific datasheet revision matches your design requirements. Ensure the ordering suffix aligns with the required packaging method, such as tape and reel or bulk. Validate RoHS compliance status if environmental regulations apply to your assembly process.
Select this component when a standard recovery rectifier with 400 V blocking capability is required. The DO-201AD package provides sufficient thermal dissipation for continuous 3 A loads. Consider the 1.2 V forward voltage drop for efficiency calculations. Verify that the 200 A surge rating meets the inrush current demands of the target circuit application.
This device belongs to the 1N5401 through 1N5408 series of general-purpose rectifiers originally published by Fairchild Semiconductor and now maintained by ON Semiconductor. The series shares identical physical dimensions and thermal characteristics, differing primarily in their maximum repetitive reverse voltage ratings. The 1N5404 specifically targets 400 V applications within this standardized family.
Cross-reference with Vishay 1N5404-E3/54 or Diotec 1N5404 for equivalent electrical specifications. Verify package compatibility and lead form before substitution. Check manufacturer-specific datasheets for any variations in thermal resistance or reverse recovery characteristics.