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The Diodes Incorporated 1N5406-B is a silicon rectifier diode housed in a DO-201AD plastic package. It features a peak repetitive reverse voltage of 600 V and an average rectified output current of 3.0 A at 105°C ambient temperature. The device supports a non-repetitive peak forward surge current of 200 A for an 8.3 ms half-sine wave. Electrical characteristics include a maximum forward voltage of 1.0 V at 3.0 A and a peak reverse current of 10 µA at 25°C. The junction-to-ambient thermal resistance is 15 °C/W, with an operating temperature range from -65°C to +150°C.
Verify the specific ordering suffix '-B' corresponds to bulk packaging containing 500 units per reel or box as defined in the manufacturer's ordering information table. Confirm that the component meets RoHS compliance standards regarding lead-free finishes. Check for any environmental exemptions applicable to glass or high-temperature solder materials used in the manufacturing process.
Select this component for general-purpose rectification tasks requiring a 600 V blocking voltage and 3.0 A continuous current handling. Ensure the application environment remains within the specified -65°C to +150°C junction temperature range. Consider derating the forward current by 20% if the load is capacitive rather than resistive or inductive.
This part belongs to the 1N5400 through 1N5408 series of 3.0 A rectifiers manufactured by Diodes Incorporated. The datasheet explicitly states that this series is not recommended for new designs and suggests using the S3A-S3M series instead. The product utilizes a molded plastic case with UL flammability classification 94V-0.
The datasheet recommends the S3A-S3M series as alternative components. Verify electrical compatibility and physical dimensions before substitution.
The maximum non-repetitive peak forward surge current is 200 A for an 8.3 ms single half-sine-wave superimposed on rated load.
For capacitive loads, the current must be derated by 20% compared to resistive or inductive loads.