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The Taiwan Semiconductor Corporation 1N5406G-K is a standard recovery rectifier diode designed for general-purpose applications. It features a maximum average forward rectified current of 3 A and a maximum repetitive peak reverse voltage of 600 V. The device is housed in a DO-201AD (DO-27) through-hole package with axial leads. Key electrical characteristics include a maximum non-repetitive peak forward surge current of 200 A, a maximum reverse current of 5 µA, and a maximum forward voltage of 1.2 V at rated current. It operates within a junction temperature range up to 150 °C.
Verify the specific suffix against the manufacturer's official datasheet to confirm exact electrical tolerances and packaging variations. Ensure the component meets RoHS compliance requirements if specified for your project. Cross-reference the DO-201AD package dimensions with your PCB footprint library to guarantee mechanical compatibility during assembly.
Select this component for circuits requiring reliable 600 V blocking voltage and 3 A continuous current handling. It is suitable for standard frequency rectification where fast recovery is not critical. Consider the thermal management requirements for the DO-201AD package when designing high-current layouts. Verify that the 150 °C junction temperature rating aligns with your system's operating environment.
This part belongs to the widely recognized 1N540x series of silicon rectifiers, offering standardized performance across various manufacturers. The G-K suffix indicates specific manufacturing lot or packaging details from Taiwan Semiconductor. It serves as a direct functional replacement for generic 1N5406 specifications in industrial and consumer electronics designs requiring robust, low-cost rectification solutions.
Direct substitutes include Vishay 1N5406-E3/58 and Comchip Technology 1N5406-G. These alternatives share identical 3 A / 600 V ratings and DO-201AD packages. Verify pinout orientation and forward voltage drop similarities before finalizing substitutions in existing designs.