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The 1N5406GHA0G is a glass passivated silicon rectifier diode manufactured by Taiwan Semiconductor. It belongs to the 1N5400 series and features a DO-201AD axial leaded package. The device provides a maximum average forward rectified current of 3A and a maximum repetitive peak reverse voltage of 600V. Key electrical characteristics include a low forward voltage drop for high efficiency and a low leakage current. The component is designed for general-purpose rectification applications in power supplies, inverters, and converters.
Verify the specific suffix 'GHA0' against the manufacturer's official datasheet to confirm compliance details such as AEC-Q101 qualification and halogen-free status. Ensure the ordering code matches the required packaging and terminal plating specifications. Cross-reference the part number with authorized distributors to confirm availability and authenticity before procurement.
Select this component when a standard recovery rectifier with 3A continuous current and 600V blocking voltage is required. The glass passivation offers superior stability compared to epoxy encapsulated alternatives. Consider the DO-201AD package size for through-hole mounting constraints. Verify thermal management requirements for the intended operating temperature range.
This part is part of the 1N5400 series of general-purpose plastic rectifiers from Taiwan Semiconductor. The series covers voltage ratings from 50V to 1000V with a consistent 3A current rating. The 'G' suffix typically indicates a green, halogen-free compound, while 'H' denotes AEC-Q101 qualification. This specific variant combines these attributes for automotive or high-reliability industrial use.
Compatible replacements include Vishay 1N5406-E3/73 and generic 1N5406 equivalents. Verify that substitute parts meet the same DO-201AD footprint and electrical ratings. Check if the replacement requires glass passivation or specific halogen-free certification if mandated by the design.