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The 1N5407-G is a general-purpose silicon rectifier diode manufactured by Comchip Technology. It features an 800V peak reverse voltage and a 3A average forward current rating. The device utilizes a DO-27 axial leaded package for through-hole mounting. Electrical characteristics include a maximum forward voltage of 1V at rated current and a low reverse leakage current of 5uA. It supports a wide operating temperature range from -65°C to +125°C and withstands a 200A non-repetitive peak surge current.
Verify the manufacturer part number against official Comchip Technology documentation to ensure authenticity. Confirm RoHS compliance status and specific packaging options such as ammo pack quantities prior to ordering. Cross-reference datasheet electrical limits with circuit requirements to validate performance under expected load conditions.
Select this component when an 800V blocking voltage and 3A continuous current capacity are required. The DO-27 package is appropriate for through-hole PCB designs. Ensure thermal management accounts for the specified junction temperature limits during operation.
This diode belongs to the 1N540x series of general-purpose rectifiers. It shares the same physical package and current ratings as variants like the 1N5404-G and 1N5406-G, differing primarily in its higher peak reverse voltage specification. It serves as a standard solution for medium-power rectification tasks.
Compatible substitutes include other manufacturers' 1N5407 equivalents or the 1N5408-G if higher voltage tolerance is acceptable. Verify pinout compatibility and thermal characteristics before substitution.