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The Diodes Incorporated 1N5407-T is a silicon rectifier diode housed in the DO-201AD axial leaded package. It provides an average rectified output current of 3.0 A and supports a peak repetitive reverse voltage of 800 V. The device features a maximum forward voltage drop of 1.0 V at 3.0 A and handles a non-repetitive peak forward surge current of 200 A. Operating temperatures range from -65°C to +150°C, with a typical thermal resistance of 15°C/W.
Verify the specific manufacturer part number against official datasheets before procurement. Confirm that the component meets all required electrical ratings for your application. Check for any end-of-life notices or recommended replacements. Ensure packaging details match your assembly needs. Validate compliance requirements such as RoHS status.
Select this component based on its 800 V reverse voltage rating and 3.0 A current capacity. Consider the DO-201AD package for through-hole mounting. Evaluate thermal management requirements given the 15°C/W thermal resistance. Compare performance characteristics against alternative rectifiers if higher efficiency is needed.
This component belongs to the 1N5400-1N5408 series of general-purpose rectifiers manufactured by Diodes Incorporated. These devices are widely used in various electronic applications requiring reliable rectification. The series offers different voltage ratings to suit diverse circuit designs.
The datasheet explicitly states that the 1N5400-1N5408 series is not recommended for new design and recommends using the S3A-S3M Series as alternatives.