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The 1N5407GHA0 is a silicon rectifier diode manufactured by Taiwan Semiconductor. It features a single-phase, single-element configuration housed in the DO-201AD axial leaded package. The device supports a maximum average forward rectified current of 3A and withstands a maximum repetitive peak reverse voltage of 800V. Key electrical characteristics include a maximum non-repetitive peak forward surge current of 125A and a maximum forward voltage of 1V. The component operates within a temperature range from -65°C to 150°C junction temperature.
Verify the specific suffix against manufacturer documentation to confirm compliance status and mechanical variations. Confirm RoHS directive adherence and halogen-free definitions via official datasheets. Ensure the ordering code matches the required AEC-Q101 qualification if automotive standards are necessary for the application.
Select this component for applications requiring an 800V blocking voltage and 3A continuous current handling. The DO-201AD package provides through-hole mounting suitable for general industrial use. Consider the glass passivation for improved stability compared to standard plastic encapsulated alternatives in demanding thermal environments.
This part belongs to the 1N5400G through 1N5408G series of glass passivated rectifiers. The series offers various voltage ratings from 50V to 1000V while maintaining consistent 3A current capabilities. The 'G' suffix typically indicates halogen-free green compound packaging compliant with environmental directives.
Standard 1N5407 equivalents from other manufacturers may serve as substitutes if pinout and electrical ratings match. Verify that replacement parts meet the same DO-201AD mechanical dimensions and thermal requirements.