SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The 1N5407GHA0G is a silicon rectifier diode manufactured by Taiwan Semiconductor Corporation. It features a single-phase, one-element configuration housed in the DO-201AD axial leaded package. The device supports a maximum average forward rectified current of 3A and a maximum repetitive peak reverse voltage of 800V. Key electrical characteristics include a low forward voltage drop and high surge current capability, designed for general-purpose rectification applications.
Verify the specific suffix 'HA0' against official Taiwan Semiconductor documentation to confirm AEC-Q101 qualification status and halogen-free compliance. Ensure the ordering code matches the exact mechanical and electrical specifications required for your design. Cross-reference datasheets from authorized distributors to validate RoHS directive adherence before procurement.
Select this component when an 800V blocking voltage and 3A continuous current rating are required in a standard through-hole package. Consider the glass passivation technology for improved stability compared to non-passivated alternatives. Evaluate the thermal management requirements based on the specified operating temperature range and forward voltage characteristics.
This part belongs to the 1N540x series of general-purpose silicon rectifiers produced by Taiwan Semiconductor. The series offers various voltage ratings within the same physical footprint, allowing for flexible design integration. The 'G' suffix typically indicates halogen-free molding compound, while 'H' denotes AEC-Q101 automotive qualification.
Compatible substitutes include other manufacturers' 1N5407 variants in the DO-201AD package, such as Vishay's 1N5407 or Comchip's 1N5407T-G. Verify that replacement parts meet the same 800V reverse voltage and 3A forward current ratings. Confirm package dimensions and pinout compatibility to ensure seamless board integration.