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The 1N5407K is a silicon rectifier diode manufactured by Diotec Semiconductor, housed in the DO-204AC (DO-15) axial leaded package. It features a maximum average forward rectified current of 3A and a repetitive peak reverse voltage rating of 1000V. The device exhibits a maximum DC reverse leakage current of 5µA at its rated voltage and a typical forward voltage drop of 1.1V at full load. Designed for standard recovery applications with a reverse recovery time of 1.5µs, it operates reliably within a junction temperature range of -50°C to 175°C.
Verify component authenticity through official manufacturer channels or authorized distributors. Confirm RoHS3 compliance status and specific datasheet revisions prior to integration. Ensure ordering suffixes match exact electrical specifications. Validate packaging formats against production requirements. Cross-reference part numbers with current availability lists to prevent procurement delays.
Select this component when high reverse voltage isolation is required alongside moderate current capacity. The DO-15 package provides mechanical durability for through-hole mounting. Consider the 1.5µs reverse recovery characteristic for non-switching applications. Evaluate thermal management needs given the 175°C maximum junction limit. Compare against lower voltage variants if system constraints allow reduced ratings.
This rectifier belongs to the standard 1N54xx series family, differentiated primarily by breakdown voltage ratings. While sharing identical current handling and physical dimensions with peers like the 1N5408, the 1000V rating distinguishes it for higher potential applications. The K suffix typically denotes specific manufacturing lot or packaging variations defined by Diotec Semiconductor.