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The Diodes Incorporated 1N5408-A is a silicon rectifier diode designed for general-purpose applications. It features an average forward rectified current of 3 A and a maximum repetitive peak reverse voltage of 1000 V. The device utilizes a DO-201AD axial through-hole package with a molded epoxy body. Key electrical characteristics include a maximum non-repetitive peak forward surge current of 200 A, a typical forward voltage drop of 1.1 V at 3 A, and a low reverse leakage current of 5 µA at 1000 V. The junction temperature range spans from -65°C to 150°C.
Verify the specific suffix 'A' against the official Diodes Incorporated datasheet to confirm if it denotes a specific tape-and-reel packaging variant or a distinct electrical parameter deviation compared to the standard 1N5408G. Ensure the ordering part number matches the required mechanical lead form and compliance certifications such as RoHS3.
Select this component when a 3 A current rating and 1000 V blocking voltage are required in a standard through-hole configuration. It serves as a direct replacement for legacy 1N5408 designs where Diodes Incorporated manufacturing origin is specified. Consider thermal derating requirements for ambient temperatures exceeding 75°C.
This component belongs to the 1N5400 series of general-purpose plastic rectifiers. The series covers reverse voltage ratings from 50 V to 1000 V, sharing identical current handling and package dimensions. The 1N5408 variant specifically targets high-voltage DC output applications within this family.
Cross-reference with Vishay 1N5408-E3/73 or onsemi 1N5408G for pin-compatible alternatives. Verify that substitute manufacturers maintain the same DO-201AD footprint and 1000 V / 3 A ratings.