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The Vishay General Semiconductor - Diodes Division 1N5408-E3/51 is a silicon rectifier diode in the 1N5400 series, rated for a maximum repetitive peak reverse voltage of 1000 V and a maximum average forward rectified current of 3.0 A at an ambient temperature of 25 °C. It features a maximum instantaneous forward voltage of 1.2 V at 3.0 A and a maximum DC reverse current of 5.0 μA at 25 °C. The device operates within a junction and storage temperature range of -50 to +150 °C, with a typical thermal resistance from junction to ambient of 20 °C/W.
Verify that the specific ordering suffix matches the required delivery mode and base quantity. Confirm RoHS compliance status as indicated by the E3 suffix. Ensure the component meets the commercial grade specifications outlined in the datasheet. Validate lead length requirements for thermal derating calculations before finalizing procurement orders.
Select this component when a high-voltage rectifier capable of handling 1000 V reverse blocking is required. The 3.0 A continuous current rating suits moderate power applications. Verify that the DO-201AD through-hole package fits the design constraints. Consider the 200 A non-repetitive surge current capability for transient protection needs.
This part belongs to the 1N5400 thru 1N5408 series of general purpose plastic rectifiers manufactured by Vishay General Semiconductor. The series covers reverse voltages from 50 V to 1000 V while maintaining a consistent 3.0 A average forward current rating across all variants. The 1N5408 variant specifically addresses the highest voltage requirement within this standard lineup.
Compatible substitutes include other 1N5408 variants such as 1N5408-E3/73 or generic equivalents meeting the same electrical ratings. Ensure replacement parts maintain the DO-201AD package dimensions and polarity marking conventions.