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The Comchip Technology 1N5408-G is a standard recovery rectifier diode designed for general-purpose applications. It features a maximum average forward rectified current of 3 A and a repetitive peak reverse voltage of 1 kV. The device utilizes a DO-210AD (DO-201AD) axial through-hole package. Key electrical characteristics include a maximum forward voltage of 950 mV at 3 A, a non-repetitive peak forward surge current of 150 A, and a maximum reverse leakage current of 5 uA at 1000 V. The component operates within a junction temperature range of -65 °C to +125 °C.
Verify the specific manufacturer datasheet for the 1N5408-G variant, as specifications such as forward voltage and surge current may vary between manufacturers using this part number. Confirm RoHS compliance status and packaging options (cut tape or reel) directly with the supplier. Ensure the DO-210AD package dimensions match your PCB footprint requirements before finalizing procurement.
Select the 1N5408-G when a 3 A continuous current rating and 1 kV blocking voltage are required for through-hole mounting. Compare the 950 mV forward voltage specification against other brands to ensure thermal management compatibility. Verify that the 150 A surge current rating meets the inrush requirements of the target circuit design.
The 1N5408-G belongs to the widely recognized 1N540x series of general-purpose silicon rectifiers. This series is standardized across multiple semiconductor manufacturers, offering interchangeable functionality for basic rectification tasks. The 'G' suffix typically indicates Green/RoHS-compliant manufacturing processes. The component serves as a fundamental discrete semiconductor device for converting alternating current to direct current in low-to-medium power electronics.
Direct substitutes include Vishay 1N5408-E3/73, onsemi 1N5408G, and Diotec 1N5408. These alternatives share the same JEDEC outline and core electrical ratings. Verify that replacement parts maintain the required 1 kV reverse voltage and 3 A forward current capabilities.