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The 1N5408G-FM25 is a standard recovery rectifier diode manufactured by Diodes Incorporated. It features a maximum repetitive peak reverse voltage of 1000 V and an average forward rectified current of 3 A. The device utilizes a glass-passivated die construction within a DO-201AD axial through-hole package. Key electrical parameters include a maximum reverse leakage current of 5 µA at 1000 V, a typical forward voltage of 1.1 V at 3 A, and a junction capacitance of 40 pF at 4 V and 1 MHz. The component supports a wide operating temperature range from -55°C to +150°C junction temperature.
Verify the obsolete status indicated in official documentation before procurement planning. Confirm RoHS3 compliance requirements against specific project constraints. Ensure the DO-201AD axial leaded package matches the target PCB footprint. Validate that the 1000V reverse voltage rating meets the circuit's peak inverse voltage demands without excessive derating margins.
Select this component when a robust 3A standard recovery diode is required for high-voltage applications. The 1000V rating provides significant headroom for mains-derived circuits. The axial DO-201AD package facilitates easy manual assembly or wave soldering processes. Consider the 150°C junction temperature limit for thermal management in enclosed environments compared to lower-rated alternatives.
This part belongs to the 1N5408 series of general-purpose silicon rectifiers. It shares the fundamental electrical characteristics of the base 1N5408 model but includes specific manufacturing suffixes indicating glass passivation and packaging variations. The product line is widely used in consumer electronics and industrial equipment requiring reliable AC-to-DC conversion.
Direct substitutes include other 1N5408 variants from different manufacturers offering identical 1000V/3A specifications in DO-201 packages. Verify pinout compatibility and thermal resistance values when cross-referencing with equivalent parts from other suppliers.