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Product Detailed Parameters
- Description：DIODE STANDARD 1000V 3A DO201AD
- Series：-
- Mfr：Taiwan Semiconductor Corporation
- Package：Tape & Reel (TR)
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：1000 V
- Current - Average Rectified (Io)：3A
- Voltage - Forward (Vf) (Max) @ If：1 V @ 3 A
- Speed：Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：5 µA @ 1000 V
- Capacitance @ Vr, F：25pF @ 4V, 1MHz
- Mounting Type：Through Hole
- Package / Case：DO-201AD, Axial
- Supplier Device Package：DO-201AD
- Operating Temperature - Junction：-55°C ~ 150°C
- Grade：-
- Qualification：-
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Overview
The 1N5408G-K is a silicon rectifier diode manufactured by Taiwan Semiconductor Corporation. It features a maximum average forward rectified current of 3 A and a repetitive peak reverse voltage of 1000 V. The device utilizes a DO-201AD axial leaded plastic package with an isolated case configuration. Electrical characteristics include a maximum non-repetitive peak forward surge current of 200 A, a maximum DC reverse leakage current of 5 µA, and a maximum forward voltage drop of 1 V at rated current. The component operates within a junction temperature range of -55 °C to +175 °C.
Feature Summary
- Glass passivated die construction for enhanced reliability
- High current capability with low forward voltage drop
- Surge overload rating supporting high peak currents
- Compliant with RoHS Directive 2011/65/EU
Applications
- General purpose rectification in power supplies
- Bridge rectifier circuits
- Free-wheeling diodes in inductive load protection
Procurement Notes
Verify the specific suffix 'K' against the manufacturer's official datasheet to confirm packing code or tape-and-reel specifications. Ensure the ordered part matches the required DO-201AD package dimensions and terminal plating details. Cross-reference the manufacturer's latest revision history to confirm compliance with current environmental directives such as RoHS and WEEE before finalizing procurement orders.
Selection Notes
Select this component for applications requiring robust standard recovery performance with high surge tolerance. The 1000 V reverse voltage rating provides sufficient margin for mains-powered systems. Consider the 3 A continuous current capacity and the thermal management requirements associated with the DO-201AD package when designing the circuit layout and heat dissipation strategy.
Part Context
This component belongs to the 1N5400 series of general-purpose silicon rectifiers. It shares the same electrical ratings as other manufacturers' 1N5408 equivalents but is distinguished by Taiwan Semiconductor's specific manufacturing processes and packaging standards. The series is widely used in AC-to-DC conversion applications where standard recovery speed is adequate.
Replacement Considerations
Direct replacements include Diodes Incorporated 1N5408G-K and ON Semiconductor 1N5408G. Verify that substitute parts maintain identical pinout configurations, voltage ratings, and current capabilities to ensure circuit compatibility without redesign.
FAQ
What is the maximum non-repetitive peak forward surge current?
The maximum non-repetitive peak forward surge current is 200 A.
Does the device meet environmental compliance standards?
Yes, the component is compliant with the RoHS Directive 2011/65/EU and is halogen-free according to IEC 61249-2-21 definitions.
