SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The 1N5408GH is a standard recovery rectifier manufactured by Taiwan Semiconductor Corporation. It features a maximum average forward rectified current of 3 A and a repetitive peak reverse voltage of 1000 V. The device utilizes a DO-201AD axial leaded package suitable for through-hole mounting. Key electrical characteristics include a non-repetitive peak forward surge current rating of 200 A at 8.3 ms single half-sine-wave. The component operates within a junction temperature range of -55 °C to +175 °C and maintains a low reverse leakage current of 5 µA at rated DC voltage.
Verify the specific suffix GH against the manufacturer's official datasheet to confirm packaging configuration and compliance status. Ensure the ordering part number matches the required RoHS directive and AEC-Q101 qualification if automotive grade reliability is mandated. Cross-reference the DO-201AD package dimensions with your PCB footprint library before finalizing procurement orders.
Select this component when a 3 A continuous current rating and 1000 V blocking voltage are required for through-hole implementations. The 175 °C junction temperature rating allows for operation in higher ambient temperature environments compared to standard 150 °C devices. Consider the 200 A surge rating for applications involving significant inrush currents or transformer magnetization spikes.
This component belongs to the 1N54xx series of silicon rectifiers, widely used in industrial and consumer electronics. The 1N5408 variant specifically denotes the 1000 V rating within this family. The GH suffix typically indicates specific tape-and-reel or cut-tape packaging options provided by Taiwan Semiconductor for automated assembly processes.
The maximum operating junction temperature is +175 °C.
Yes, the component is qualified according to AEC-Q101 standards.