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The Comchip Technology 1N5408T-G is a standard recovery rectifier diode designed for general-purpose applications. It features a single configuration housed in the DO-210AD (SMA) through-hole package. Key electrical parameters include a maximum repetitive peak reverse voltage of 1 kV and an average forward current rating of 3 A. The device exhibits a maximum forward voltage drop of 950 mV and a low reverse leakage current of 5 uA. It supports a maximum non-repetitive peak forward surge current of 150 A. The component operates within a junction temperature range from -65 °C to +125 °C.
Verify the specific suffix 'T-G' against the manufacturer's official datasheet to confirm the exact packaging format, such as reel or cut tape, as ordering suffixes can indicate variations in shipping units rather than electrical performance. Ensure the DO-210AD package footprint matches your PCB layout requirements before finalizing procurement.
Select this component when a 3 A current rating and 1 kV blocking voltage are required in a compact SMA surface-mount or through-hole compatible package. Compare the 950 mV forward voltage drop against system efficiency targets. Verify that the 150 A surge capability meets the inrush current demands of the target circuit application.
This part belongs to the 1N5408 series of general-purpose silicon rectifiers manufactured by Comchip Technology. It shares the core electrical specifications of the industry-standard 1N5408 but utilizes the DO-210AD package form factor. The series is widely used in consumer electronics and industrial equipment requiring reliable high-voltage rectification.
Direct substitutes include other manufacturers' 1N5408 variants in the DO-210AD package, provided they meet the 3 A / 1 kV specifications. Verify pinout compatibility and thermal characteristics when cross-referencing with equivalent parts from other suppliers.