1N5416 BK TIN/LEAD

Overview

The Central Semiconductor Corp 1N5416 BK TIN/LEAD is a fast recovery glass passivated silicon rectifier. It features a peak repetitive reverse voltage of 100 V and an average forward current rating of 3.0 A at 55°C ambient temperature. The device operates within a junction temperature range of -65 to +200 °C. Electrical characteristics include a maximum reverse leakage current of 1.0 µA at rated voltage, a peak forward surge current capability of 80 A for 8.3 ms pulses, and a maximum forward voltage drop of 1.1 V at 3.0 A.

Feature Summary

• Hermetically sealed glass passivated package construction
• Fast reverse recovery time performance
• High reliability design for general purpose applications

Applications

• General purpose rectification circuits
• Applications requiring fast switching speeds
• High reliability power supply designs

Procurement Notes

Verify the specific ordering suffix 'TIN/LEAD' against manufacturer documentation to confirm plating specifications. Confirm availability status as this component may be subject to discontinuation notices or limited stock conditions. Ensure compatibility with existing leaded assembly processes before finalizing procurement orders.

Selection Notes

Select this component when a 100 V blocking voltage and 3.0 A continuous current are required in a hermetically sealed package. Consider the fast recovery characteristic for high-frequency switching environments. Verify that the operating temperature range meets the thermal requirements of the target application environment.

Part Context

This part belongs to the 1N5416 through 1N5420 series of fast recovery rectifiers manufactured by Central Semiconductor. The series covers voltage ratings from 100 V to 600 V while maintaining a consistent 3.0 A forward current rating across all variants.

Replacement Considerations

Official replacement part numbers documented by the manufacturer include 1N5419 BK and 1N5419 TR.