1N5416

Overview

The Microchip Technology 1N5416 is a silicon PNP power bipolar junction transistor (BJT) designed for high-voltage applications. It features a maximum collector-emitter voltage (VCEO) of 300 V and a collector-base voltage (VCBO) of 350 V, with an emitter-base voltage (VEBO) rating of 6 V. The device supports a continuous DC collector current of 1 A and dissipates up to 1 W of power. It operates within a temperature range of -65 °C to +200 °C. The component utilizes a TO-5-3 through-hole package and provides a DC current gain (hFE) ranging from 15 to 120.

Feature Summary

• High-voltage capability with a 300 V collector-emitter breakdown rating suitable for demanding power circuits.
• Wide thermal operating range extending to +200 °C, enabling functionality in extreme environmental conditions.
• Robust mechanical construction using a hermetically sealed TO-5 metal can package for durability.

Applications

• High-voltage switching circuits requiring reliable PNP control
• Power amplification stages in industrial equipment
• Military-grade electronic systems necessitating extended temperature tolerance

Procurement Notes

Verify the specific revision level and manufacturing date code against project requirements before procurement. Confirm that the TO-5-3 lead configuration matches the target PCB footprint or adapter hardware. Ensure that the supplier provides traceability documentation consistent with military or high-reliability standards if applicable. Check for any product change notifications regarding material composition or assembly site modifications.

Selection Notes

Select this component when a high-voltage PNP transistor is required with a minimum 300 V collector-emitter rating. The 1 A current capacity and 1 W power dissipation define the thermal management strategy. Consider the TO-5 package constraints for board layout and mounting hardware. Compare the hFE range against the base drive circuit capabilities to ensure adequate saturation or linear operation margins.

Part Context

The 1N5416 belongs to the standard military-grade NPN/PNP transistor series manufactured by Microchip Technology. It serves as a discrete power semiconductor component within the broader category of bipolar junction transistors. The device is distinct from surface-mount variants like the 2N5416U4, offering through-hole integration for legacy or ruggedized designs.

Replacement Considerations

Direct substitutes include other manufacturers' equivalents meeting the 1N5416 electrical specifications. Verify pinout compatibility and package dimensions before substitution. Cross-reference datasheets for variations in hFE distribution or thermal resistance characteristics.