SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Microchip Technology 1N5418E3 is a fast recovery rectifier diode designed for high-reliability applications. It features a single-element silicon construction with a maximum average rectified forward current of 3 A and a peak repetitive reverse voltage rating of 400 V. The device exhibits a maximum non-repetitive peak forward surge current of 80 A and a typical reverse recovery time of 150 ns. Electrical characteristics include a maximum DC reverse leakage current of 1 µA at the rated voltage and a maximum forward voltage drop of 1.5 V under specified conditions. The component operates within a junction temperature range of -65 °C to +175 °C and utilizes an axial leaded B-package configuration.
Verify the specific manufacturer source, as multiple entities produce this part number. Confirm compliance with MIL-PRF-19500/411 standards if military qualification is required. Check for RoHS compliance status regarding the E3 suffix. Ensure the package type matches the intended PCB layout requirements before finalizing procurement orders.
Select this component when high reliability and fast switching speeds are critical. The 3 A current rating suits moderate power rectification tasks. Verify that the 400 V reverse voltage meets circuit peak inverse voltage demands. Consider the axial leaded package for through-hole mounting constraints in the design phase.
This diode belongs to the industry-standard 1N54xx series of rectifiers. The E3 suffix indicates lead-free composition compliant with environmental directives. Microchip Technology manufactures qualified versions adhering to strict military specifications for durability and consistent electrical performance across varying operational conditions.
Direct substitutes include the JANS1N5418 for fully qualified military variants. Other generic equivalents may exist but require verification of reverse recovery time and hermetic sealing capabilities to ensure functional parity.