1N5419US/TR

Overview

The Microchip Technology 1N5419US/TR is a fast recovery rectifier diode designed for high-reliability applications. It features a single-phase, one-element silicon construction with a maximum average forward current of 3 A and a repetitive peak reverse voltage of 500 V. The device operates within a temperature range of -65 °C to +175 °C. Key electrical parameters include a maximum non-repetitive peak forward surge current of 80 A, a maximum DC reverse leakage current of 1 µA at rated voltage, and a typical forward voltage drop of 1.5 V. The package is a hermetically sealed glass D-5B (DO-201AD) axial leaded configuration.

Feature Summary

• Hermetically sealed glass construction ensuring environmental protection
• Fast recovery characteristics suitable for high-frequency switching
• High thermal stability supporting extended operating temperatures

Applications

• High-reliability power supply circuits
• Military and aerospace electronic systems
• Industrial control equipment requiring robust rectification

Procurement Notes

Verify the specific suffix 'TR' against official Microchip documentation to confirm tape-and-reel packaging availability, as standard military variants often utilize bulk or tube packaging. Ensure compliance with MIL-PRF-19500 specifications if required by the design. Confirm RoHS status, as military-grade components may not be compliant. Validate that the D-5B package dimensions match the target PCB footprint requirements.

Selection Notes

Select this component when a 500 V reverse voltage rating and 3 A continuous current capacity are required in a through-hole package. The fast recovery time makes it suitable for general-purpose rectification where standard recovery diodes may exhibit excessive reverse recovery charge. Consider the hermetic seal requirement for harsh environments. Compare against similar 1N54xx series parts if different voltage ratings are needed.

Part Context

This part belongs to the 1N54xx series of fast recovery rectifiers manufactured by Microchip Technology. It is a high-reliability variant of the standard 1N5419 diode. The series is known for its ruggedness and is commonly used in applications demanding long-term reliability under extreme conditions. The US designation typically indicates a military or space-grade qualification level.

Replacement Considerations

Direct replacements include other 1N5419 variants from qualified manufacturers, provided they meet the same 500 V, 3 A, and fast recovery specifications. Verify pinout compatibility and package dimensions before substitution. Cross-reference with JAN1N5419 or equivalent military-grade parts for identical performance profiles.