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The Microchip Technology 1N5419US is a high-reliability, hermetically sealed fast recovery rectifier diode designed for demanding environments. It features a single silicon element with a maximum repetitive peak reverse voltage of 500 V and an average forward current rating of 3 A. The device utilizes voidless-glass construction to ensure durability and performance under extreme conditions. Key electrical specifications include a maximum non-repetitive peak forward surge current of 80 A, a maximum reverse current of 1 uA at rated voltage, and a typical reverse recovery time of 250 ns. The component operates within a junction temperature range from -65 °C to +175 °C.
Verify the specific ordering suffix and revision level against the latest manufacturer datasheet to ensure compliance with current military specifications. Confirm that the package marking and traceability documentation meet project requirements. Check for any product change notifications or obsolescence notices prior to finalizing procurement decisions.
Select this component when hermetic sealing and military-grade reliability are mandatory. Ensure the 500 V reverse voltage and 3 A current ratings align with circuit demands. Consider the through-hole B-package form factor for board layout compatibility. Validate thermal management capabilities given the wide operating temperature range.
This part belongs to the 1N5415 through 1N5420 series of voidless hermetically sealed fast recovery glass rectifiers. These devices are industry-recognized for their robustness in critical applications where failure is not an option. The series offers various voltage ratings while maintaining consistent current handling and recovery speed characteristics across the lineup.
Direct substitutes must match the hermetic seal, package type, and electrical parameters. Verify equivalent military qualification status if required by the application.