1N5524CUR-1/TR

Overview

The Microchip Technology 1N5524CUR-1/TR is a low voltage avalanche Zener diode with a nominal breakdown voltage of 5.6 V and a maximum power dissipation of 0.5 W. It features a hermetically sealed DO-213AA (MELF) surface mount package and includes an internal metallurgical bond option. The device operates within a junction temperature range of -65°C to +175°C, exhibits a forward voltage of 1.1 V at 200 mA, and has a maximum reverse leakage current of 2 µA at 3.5 V.

Feature Summary

• Hermetically sealed glass MELF package construction
• Internal metallurgical bond for enhanced reliability
• Qualified per MIL-PRF-19500/437 standards
• Minimal capacitance characteristics

Applications

• Voltage regulation over broad operating currents
• Radiation-hardened circuit designs
• ESD-sensitive environment protection

Procurement Notes

Verify the specific suffix configuration against the datasheet nomenclature table to ensure correct tolerance and qualification levels. Confirm that the TR suffix indicates tape and reel packaging as specified in the mechanical section. Cross-reference the JEDEC type number with the electrical characteristics table to validate impedance and leakage parameters before procurement.

Selection Notes

Select this component when a hermetically sealed surface mount Zener diode is required for high-reliability applications. Ensure the mounting surface Coefficient of Expansion matches the device's axial expansion rate. Verify that the 5.6 V breakdown voltage aligns with the circuit design requirements and that the 0.5 W power rating accommodates the expected thermal load.

Part Context

This part belongs to the 1N5518BUR-1 through 1N5546BUR-1 series of low voltage avalanche Zener diodes manufactured by Microchip Technology. The series provides a selection of voltages from 3.3 to 33 volts with various tolerance options. These devices are designed for commercial and military-grade applications requiring robust surface mount solutions.

Replacement Considerations

1N5524B-1