1N5531

Overview

The Microchip Technology 1N5531 is a silicon oxide passivated Zener regulator diode designed for voltage regulation and reference applications. It features a nominal Zener voltage of 11 V with a maximum power dissipation of 500 mW at ambient temperatures up to 75°C. The device utilizes a hermetically sealed glass DO-204AH (DO-35) axial leaded package, ensuring reliability in harsh environments. Key electrical characteristics include a maximum reverse leakage current of 5 µA at the rated voltage and a maximum Zener impedance of 80 Ohms. It operates within a junction temperature range of -65°C to +175°C.

Feature Summary

• Hermetically sealed glass axial leaded construction for environmental protection
• Silicon oxide passivation for enhanced stability and longevity
• High thermal stability across extended industrial temperature ranges

Applications

• Precision voltage reference circuits
• Overvoltage protection stages
• Voltage regulation in aerospace systems

Procurement Notes

Verify that the specific suffix matches the required tolerance grade, as standard commercial variants differ from military-grade JAN specifications. Confirm RoHS compliance status if required by the target assembly process, noting that certain hermetic variants may not meet standard RoHS directives. Ensure the ordering quantity aligns with the manufacturer's standard packaging units to avoid partial reel issues.

Selection Notes

Select this component when a stable 11 V reference is required in high-reliability environments. The DO-204AH package is suitable for through-hole mounting on PCBs or direct wire-wrap connections. Consider the 80 Ohm impedance limit for dynamic load variations; lower impedance requirements may necessitate alternative part numbers within the same series.

Part Context

This component belongs to the 1N55xx series of low-power Zener diodes manufactured by Microchip Technology. The series is widely recognized for its use in military and aerospace electronics due to its ruggedized construction. The 1N5531 specifically provides an 11 V breakdown voltage, serving as a fundamental building block for analog signal conditioning and power management subsystems.

Replacement Considerations

Direct parameter-equivalent substitutes include JAN1N5531C-1 and JAN1N5531D-1. These variants maintain identical electrical performance but may differ in specific manufacturing lot qualifications or tolerance grades. Verify pinout compatibility before substitution.