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The Microchip Technology 1N5553US/TR is a standard recovery rectifier diode designed for surface-mount applications. It features an SQ MELF (B) package and provides a maximum repetitive peak reverse voltage of 800 V with a continuous forward current rating of 3 A. The device utilizes a single diode configuration and exhibits a low leakage current of 1 µA at rated voltage. It operates within a temperature range of -65 °C to +175 °C junction temperature, ensuring reliability in demanding environments.
Verify the specific suffix TR indicates tape-and-reel packaging when ordering. Confirm RoHS compliance status as datasheets may vary by revision. Ensure the SQ MELF footprint matches the target PCB design. Check for obsolescence notices or lifecycle changes directly from Microchip before finalizing procurement plans.
Select this component for designs requiring 800 V reverse voltage blocking in a compact surface-mount form factor. Compare thermal resistance values against system heat dissipation requirements. Verify that the 3 A continuous current rating exceeds peak load demands. Consider the SQ MELF package dimensions for spatial constraints on the printed circuit board layout.
This part belongs to the 1N555x series of glass-passivated silicon junction rectifiers manufactured by Microchip Technology. The US suffix typically denotes the SQ MELF package style, distinguishing it from through-hole variants like the 1N5553. These components are engineered for robust performance in aerospace and industrial sectors where reliability under stress is critical.
Direct substitutes include JAN1N5553US/TR for military-grade specifications. Commercial equivalents such as 1N5553US without the JAN prefix offer similar electrical parameters. Verify package compatibility and voltage ratings when cross-referencing with other manufacturers' surface-mount rectifiers.