1N5553US/TR

1N5553US/TR

$8.37
  • Description:DIODE STANDARD 800V 3A B SQMELF
  • Series:-
  • Mfr:Microchip Technology
  • Package:Tape & Reel (TR)

SKU:0ff835ecdb17 Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE STANDARD 800V 3A B SQMELF
  • Series:-
  • Mfr:Microchip Technology
  • Package:Tape & Reel (TR)
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):800 V
  • Current - Average Rectified (Io):3A
  • Voltage - Forward (Vf) (Max) @ If:1.2 V @ 9 A
  • Speed:Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):2 µs
  • Current - Reverse Leakage @ Vr:1 µA @ 800 V
  • Capacitance @ Vr, F:-
  • Mounting Type:Surface Mount
  • Package / Case:SQ-MELF, B
  • Supplier Device Package:B, SQ-MELF
  • Operating Temperature - Junction:-65°C ~ 175°C

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1N5553US/TR

Overview

The Microchip Technology 1N5553US/TR is a standard recovery rectifier diode designed for surface-mount applications. It features an SQ MELF (B) package and provides a maximum repetitive peak reverse voltage of 800 V with a continuous forward current rating of 3 A. The device utilizes a single diode configuration and exhibits a low leakage current of 1 µA at rated voltage. It operates within a temperature range of -65 °C to +175 °C junction temperature, ensuring reliability in demanding environments.

Feature Summary

  • Surface-mount construction utilizing the SQ MELF (B) package format
  • High-temperature operation capability up to 175 °C junction temperature
  • Standard recovery characteristics suitable for general-purpose rectification

Applications

  • General-purpose rectification in surface-mount circuits
  • Power supply input stages requiring high-voltage blocking
  • Industrial electronics operating in elevated temperature environments

Procurement Notes

Verify the specific suffix TR indicates tape-and-reel packaging when ordering. Confirm RoHS compliance status as datasheets may vary by revision. Ensure the SQ MELF footprint matches the target PCB design. Check for obsolescence notices or lifecycle changes directly from Microchip before finalizing procurement plans.

Selection Notes

Select this component for designs requiring 800 V reverse voltage blocking in a compact surface-mount form factor. Compare thermal resistance values against system heat dissipation requirements. Verify that the 3 A continuous current rating exceeds peak load demands. Consider the SQ MELF package dimensions for spatial constraints on the printed circuit board layout.

Part Context

This part belongs to the 1N555x series of glass-passivated silicon junction rectifiers manufactured by Microchip Technology. The US suffix typically denotes the SQ MELF package style, distinguishing it from through-hole variants like the 1N5553. These components are engineered for robust performance in aerospace and industrial sectors where reliability under stress is critical.

Replacement Considerations

Direct substitutes include JAN1N5553US/TR for military-grade specifications. Commercial equivalents such as 1N5553US without the JAN prefix offer similar electrical parameters. Verify package compatibility and voltage ratings when cross-referencing with other manufacturers' surface-mount rectifiers.

1N5553US/TR1N5553US/TR
$8.37
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